Invention Grant
US08343819B2 Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same
有权
具有片上电阻的非常薄的绝缘体上半导体（ETSOI）集成电路及其形成方法
- Patent Title: Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same
- Patent Title (中): 具有片上电阻的非常薄的绝缘体上半导体（ETSOI）集成电路及其形成方法
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Application No.: US12687273Application Date: 2010-01-14
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Publication No.: US08343819B2Publication Date: 2013-01-01
- Inventor: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Ghavam G. Shahidi
- Applicant: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Ghavam G. Shahidi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An electrical device is provided that in one embodiment includes a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness of less than 10 nm. A semiconductor device having a raised source region and a raised drain region of a single crystal semiconductor material of a first conductivity is present on a first surface of the semiconductor layer. A resistor composed of the single crystal semiconductor material of the first conductivity is present on a second surface of the semiconductor layer. A method of forming the aforementioned electrical device is also provided.
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