Invention Grant
- Patent Title: Method for manufacturing a thin film transistor
- Patent Title (中): 薄膜晶体管的制造方法
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Application No.: US13239617Application Date: 2011-09-22
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Publication No.: US08343821B2Publication Date: 2013-01-01
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2007-312879 20071203
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device in a high yield are provided. In the thin film transistor, a gate electrode, a gate insulating film, crystal grains that mainly contain silicon and are provided for a surface of the gate insulating film, a semiconductor film that mainly contains germanium and covers the crystal grains and the gate insulating film, and a buffer layer in contact with the semiconductor film that mainly contains germanium overlap with one another. Further, the display device has the thin film transistor.
Public/Granted literature
- US20120009742A1 Thin Film Transistor, Display Device Having Thin Film Transistor, And Method For Manufacturing The Same Public/Granted day:2012-01-12
Information query
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