Scaled equivalent oxide thickness for field effect transistor devices

Invention Grant

US08343839B2 Scaled equivalent oxide thickness for field effect transistor devices 有权

Title translation: 场效应晶体管器件的等效氧化物厚度变化

Please log in to see more content

Patent Title: Scaled equivalent oxide thickness for field effect transistor devices
Patent Title (中): 场效应晶体管器件的等效氧化物厚度变化
Application No.: US12788454

Application Date: 2010-05-27
Publication No.: US08343839B2

Publication Date: 2013-01-01
Inventor: Takashi Ando , Changhwan Choi , Unoh Kwon , Vijay Narayanan
Applicant: Takashi Ando , Changhwan Choi , Unoh Kwon , Vijay Narayanan
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Vazken Alexanian
Main IPC: H01L21/8236
IPC: H01L21/8236

Scaled equivalent oxide thickness for field effect transistor devices

Abstract:

A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device.

Abstract(Chinese):

一种形成场效应晶体管器件的方法包括在衬底上形成氧化物层，在氧化层上形成电介质层，在电介质层上形成第一TiN层，在第一层上形成金属层，形成第二TiN 去除一部分第一TiN层，金属层和第二TiN层以暴露介电层的一部分，在介电层的暴露部分上形成化学计量的TiN层，第二层 TiN层，加热器件，并在器件上形成多晶硅层。

Public/Granted literature

US20110291198A1 Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices Public/Granted day:2011-12-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8236	........增强型和耗尽型晶体管的组合