Invention Grant
US08343840B2 Blocking dielectric engineered charge trapping memory cell with high speed erase
有权
阻塞具有高速擦除的介电工程电荷捕获存储单元
- Patent Title: Blocking dielectric engineered charge trapping memory cell with high speed erase
- Patent Title (中): 阻塞具有高速擦除的介电工程电荷捕获存储单元
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Application No.: US12763006Application Date: 2010-04-19
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Publication No.: US08343840B2Publication Date: 2013-01-01
- Inventor: Sheng-Chih Lai , Hang-Ting Lue , Chien-Wei Liao
- Applicant: Sheng-Chih Lai , Hang-Ting Lue , Chien-Wei Liao
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/792
Abstract:
A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including the channel by an engineered tunneling dielectric.
Public/Granted literature
- US20100193859A1 BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE Public/Granted day:2010-08-05
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