Invention Grant
- Patent Title: Methods of manufacturing capacitor structures and methods of manufacturing semiconductor devices using the same
- Patent Title (中): 制造电容器结构的方法和使用其制造半导体器件的方法
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Application No.: US12659769Application Date: 2010-03-19
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Publication No.: US08343845B2Publication Date: 2013-01-01
- Inventor: Yong-Il Kim , Dae-Ik Kim , Yun-Sung Lee , Nam-Jung Kang
- Applicant: Yong-Il Kim , Dae-Ik Kim , Yun-Sung Lee , Nam-Jung Kang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0023929 20090320
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A capacitor structure includes a plurality of lower electrodes on a substrate, the lower electrodes having planar top surfaces and being arranged in a first direction to define a lower electrode column, a plurality of lower electrode columns being arranged in a second direction perpendicular to the first direction to define a lower electrode matrix, a plurality of supports on upper sidewalls of at least two adjacent lower electrodes, a dielectric layer on the lower electrodes and the supports, and an upper electrode on the dielectric layer.
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