Invention Grant
- Patent Title: Method and structure for dividing a substrate into individual devices
- Patent Title (中): 将基板分割为各个装置的方法和结构
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Application No.: US13095584Application Date: 2011-04-27
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Publication No.: US08343852B2Publication Date: 2013-01-01
- Inventor: Minhua Li , Qi Wang , Gordon Sim , Matthew Reynolds , Suku Kim , James J. Murphy , Hamza Yilmaz
- Applicant: Minhua Li , Qi Wang , Gordon Sim , Matthew Reynolds , Suku Kim , James J. Murphy , Hamza Yilmaz
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.
Public/Granted literature
- US20110201179A1 METHOD AND STRUCTURE FOR DIVIDING A SUBSTRATE INTO INDIVIDUAL DEVICES Public/Granted day:2011-08-18
Information query
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