Invention Grant
- Patent Title: Method of reducing memory effects in semiconductor epitaxy
- Patent Title (中): 降低半导体外延记忆效应的方法
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Application No.: US12993938Application Date: 2009-05-29
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Publication No.: US08343854B2Publication Date: 2013-01-01
- Inventor: Mark Loboda
- Applicant: Mark Loboda
- Applicant Address: US MI Midland
- Assignee: Dow Corning Corporation
- Current Assignee: Dow Corning Corporation
- Current Assignee Address: US MI Midland
- Agency: Nixon Peabody LLP
- International Application: PCT/US2009/045551 WO 20090529
- International Announcement: WO2009/148930 WO 20091210
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction chamber between growth steps.
Public/Granted literature
- US20110073874A1 METHOD OF REDUCING MEMORY EFFECTS IN SEMICONDUCTOR EPITAXY Public/Granted day:2011-03-31
Information query
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