Invention Grant
- Patent Title: Nanostructured device
- Patent Title (中): 纳米结构设备
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Application No.: US12094211Application Date: 2006-11-24
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Publication No.: US08343855B2Publication Date: 2013-01-01
- Inventor: Pierre Mur , Cécile Oillic
- Applicant: Pierre Mur , Cécile Oillic
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique
- Current Assignee: Commissariat A L'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Millen, White, Zelano & Branigan, PC
- Priority: FR0511986 20051125
- International Application: PCT/EP2006/011300 WO 20061124
- International Announcement: WO2007/059996 WO 20070531
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; C12M1/00 ; G11C8/00 ; C40B50/18
Abstract:
The invention concerns a nanostructured device (100) comprising a substrate (101), an intermediate layer (102), a zone (103) consisting of multiple three-dimensional structured sites (104) made of semiconductor material, having chemical species (106) fixed to the surface of said three-dimensional nanostructured sites (104). The inventive device is useful for making a biochip and an electronic memory. The invention also concerns a method for forming an electronic memory.
Public/Granted literature
- US20090221447A1 NANOSTRUCTURED DEVICE Public/Granted day:2009-09-03
Information query
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