Invention Grant
- Patent Title: Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
- Patent Title (中): 微晶半导体膜的制造方法及半导体装置的制造方法
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Application No.: US13035037Application Date: 2011-02-25
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Publication No.: US08343858B2Publication Date: 2013-01-01
- Inventor: Tetsuhiro Tanaka , Tomokazu Yokoi , Koji Dairiki
- Applicant: Tetsuhiro Tanaka , Tomokazu Yokoi , Koji Dairiki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-045990 20100302
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method for manufacturing a microcrystalline semiconductor film having high crystallinity is provided. A method for manufacturing a semiconductor device which has favorable electric characteristics with high productivity is provided. After a first microcrystalline semiconductor film is formed over a substrate, treatment for flattening a surface of the first microcrystalline semiconductor film is performed. Then, treatment for removing an amorphous semiconductor region on a surface side of the flattened first microcrystalline semiconductor film is performed so that a second microcrystalline semiconductor film having high crystallinity and flatness is formed. After that, a third microcrystalline semiconductor film is formed over the second microcrystalline semiconductor film.
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