Invention Grant
- Patent Title: High C content molecules for C implant
- Patent Title (中): C型植入物的高C含量分子
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Application No.: US13041127Application Date: 2011-03-04
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Publication No.: US08343860B1Publication Date: 2013-01-01
- Inventor: Vincent M. Omarjee , Christian Dussarrat , Jean-Marc Girard , Nicolas Blasco
- Applicant: Vincent M. Omarjee , Christian Dussarrat , Jean-Marc Girard , Nicolas Blasco
- Applicant Address: FR Paris US CA Fremont
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,American Air Liquide, Inc.
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,American Air Liquide, Inc.
- Current Assignee Address: FR Paris US CA Fremont
- Agent Patricia E. McQueeney; Allen E. White
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
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