Invention Grant
- Patent Title: Fast gas switching plasma processing apparatus
- Patent Title (中): 快速气体开关等离子体处理装置
-
Application No.: US13189416Application Date: 2011-07-22
-
Publication No.: US08343876B2Publication Date: 2013-01-01
- Inventor: S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
- Applicant: S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
Public/Granted literature
- US20110281435A1 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS Public/Granted day:2011-11-17
Information query
IPC分类: