A method for fabrication of features of an integrated circuit and device thereof include patterning a first structure on a surface of a semiconductor device and forming spacers about a periphery of the first structure. An angled ion implantation is applied to the device such that the spacers have protected portions and unprotected portions from the angled ion implantation wherein the unprotected portions have an etch rate greater than an etch rate of the protected portions. The unprotected portions and the first structure are selectively removed with respect to the protected portions. A layer below the protected portions of the spacer is patterned to form integrated circuit features.