Invention Grant
US08344065B2 Nanoimprint resist, nanoimprint mold and nanoimprint lithography
有权
纳米压印抗蚀剂，纳米压印模具和纳米压印光刻
- Patent Title: Nanoimprint resist, nanoimprint mold and nanoimprint lithography
- Patent Title (中): 纳米压印抗蚀剂，纳米压印模具和纳米压印光刻
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Application No.: US12717952Application Date: 2010-03-05
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Publication No.: US08344065B2Publication Date: 2013-01-01
- Inventor: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen
- Applicant: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Main IPC: C08G18/42
- IPC: C08G18/42
Abstract:
A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided.
Public/Granted literature
- US20100308008A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY Public/Granted day:2010-12-09
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