Invention Grant
- Patent Title: Semiconductor device capable of switching operation modes
- Patent Title (中): 能够切换操作模式的半导体装置
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Application No.: US13067787Application Date: 2011-06-27
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Publication No.: US08344269B2Publication Date: 2013-01-01
- Inventor: Hiroyoshi Fukuda
- Applicant: Hiroyoshi Fukuda
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-89789 20080331
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H05K5/06

Abstract:
A semiconductor device includes a substrate, a first pad, a second pad, and a third pad that are placed along one side of a perimeter of the substrate, a circuit that is formed above the substrate, and that is coupled to the first pad, a first external terminal that is coupled to the second pad, and a second external terminal that is coupled to the third pad, wherein the circuit generates a signal indicative of a connection configuration between the first pad and the first external terminal, wherein the third pad is placed adjacent to one of the first pad and the second pad, wherein, in a direction parallel to the one side of the perimeter of the substrate, the first pad, the second pad and the third pad have a first width, a second width and a third width, respectively, and wherein each of the first width of the first pad and the second width of the second pad is smaller than the third width of the third pad.
Public/Granted literature
- US20110253438A1 Semiconductor device capable of switching operation modes Public/Granted day:2011-10-20
Information query
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