Invention Grant
- Patent Title: Silaborane implantation processes
- Patent Title (中): 硅烷注入工艺
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Application No.: US12764540Application Date: 2010-04-21
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Publication No.: US08344337B2Publication Date: 2013-01-01
- Inventor: William Davis Lee
- Applicant: William Davis Lee
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Cantor Colburn LLP
- Main IPC: G21G5/00
- IPC: G21G5/00

Abstract:
Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.
Public/Granted literature
- US20110260047A1 SILABORANE IMPLANTATION PROCESSES Public/Granted day:2011-10-27
Information query
IPC分类:
G | 物理 |
G21 | 核物理;核工程 |
G21G | 化学元素的转变;放射源 |
G21G5/00 | 通过化学反应进行化学元素的推断转变 |