Invention Grant
- Patent Title: Resistive memory device and method of fabricating the same
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Application No.: US12773228Application Date: 2010-05-04
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Publication No.: US08344344B2Publication Date: 2013-01-01
- Inventor: Sung-Yool Choi
- Applicant: Sung-Yool Choi
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2009-0119776 20091204
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.
Public/Granted literature
- US20110133148A1 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-06-09
Information query
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