Invention Grant
- Patent Title: Memory device
- Patent Title (中): 内存设备
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Application No.: US12244421Application Date: 2008-10-02
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Publication No.: US08344348B2Publication Date: 2013-01-01
- Inventor: Guy Wicker , Wolodymyr Czubatyj
- Applicant: Guy Wicker , Wolodymyr Czubatyj
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agency: Honigman Miller Schwartz and Cohn LLP
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first electrode and second electrode. A nonlinear electrode material is disposed between the first electrode and the second electrode. The nonlinear electrode material is electrically in series with the first electrode, the first active material, the second active material, and the second electrode. The first electrode and the first active material undergo no chemical or electrochemical reaction when current passes between the first electrode and the second electrode.
Public/Granted literature
- US20100084625A1 Memory Device Public/Granted day:2010-04-08
Information query
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