Invention Grant
- Patent Title: Phase change device with offset contact
- Patent Title (中): 相移装置，带偏置接点
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Application No.: US13093109Application Date: 2011-04-25
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Publication No.: US08344350B2Publication Date: 2013-01-01
- Inventor: Wolodymyr Czubatyj , Tyler Lowrey
- Applicant: Wolodymyr Czubatyj , Tyler Lowrey
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agent Kevin L. Bray
- Main IPC: H01L21/06
- IPC: H01L21/06 ; H01L45/00
Abstract:
A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
Public/Granted literature
- US20110194340A1 Phase Change Device with Offset Contact Public/Granted day:2011-08-11
Information query
IPC分类:
