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US08344352B2 Using unstable nitrides to form semiconductor structures 有权
使用不稳定的氮化物形成半导体结构

Using unstable nitrides to form semiconductor structures
Abstract:
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
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