Invention Grant
- Patent Title: Using unstable nitrides to form semiconductor structures
- Patent Title (中): 使用不稳定的氮化物形成半导体结构
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Application No.: US13185094Application Date: 2011-07-18
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Publication No.: US08344352B2Publication Date: 2013-01-01
- Inventor: Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
- Applicant: Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent David L. Guglielmi
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
Public/Granted literature
- US20110272811A1 USING UNSTABLE NITRIDES TO FORM SEMICONDUCTOR STRUCTURES Public/Granted day:2011-11-10
Information query
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