Invention Grant
- Patent Title: Ultraviolet sensor
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Application No.: US12123849Application Date: 2008-05-20
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Publication No.: US08344371B2Publication Date: 2013-01-01
- Inventor: Kazutaka Nakamura , Yoshihiro Ito
- Applicant: Kazutaka Nakamura , Yoshihiro Ito
- Applicant Address: JP Nagaokakyo-Shi, Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-fu
- Agency: Dickstein Shapiro LLP
- Priority: JP2005-338319 20051124
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.
Public/Granted literature
- US20080217611A1 Ultraviolet Sensor Public/Granted day:2008-09-11
Information query
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