Invention Grant
- Patent Title: Optoelectronic device and method for manufacturing the same
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Application No.: US13178323Application Date: 2011-07-07
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Publication No.: US08344409B2Publication Date: 2013-01-01
- Inventor: Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
- Applicant: Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW99137445A 20101029; TW00102057A 20110119
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
Public/Granted literature
- US20120104440A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-05-03
Information query
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