Invention Grant
- Patent Title: Semiconductor component
- Patent Title (中): 半导体元件
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Application No.: US11924115Application Date: 2007-10-25
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Publication No.: US08344415B2Publication Date: 2013-01-01
- Inventor: Holger Ruething , Frank Pfirsch , Armin Willmeroth , Frank Hille , Hans-Joachim Schulze
- Applicant: Holger Ruething , Frank Pfirsch , Armin Willmeroth , Frank Hille , Hans-Joachim Schulze
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102006050338 20061025
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.
Public/Granted literature
- US20080135871A1 SEMICONDUCTOR COMPONENT Public/Granted day:2008-06-12
Information query
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