Invention Grant
- Patent Title: Semiconductor device having ferroelectric capacitor
- Patent Title (中): 具有铁电电容器的半导体装置
-
Application No.: US13100511Application Date: 2011-05-04
-
Publication No.: US08344434B2Publication Date: 2013-01-01
- Inventor: Wensheng Wang , Yoshimasa Horii
- Applicant: Wensheng Wang , Yoshimasa Horii
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-308161 20061114
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/108 ; H01L29/94 ; H01L21/00 ; H01L21/8242
Abstract:
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.
Public/Granted literature
- US20110204479A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
Information query
IPC分类:
