Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US12839723Application Date: 2010-07-20
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Publication No.: US08344441B2Publication Date: 2013-01-01
- Inventor: Kiyohito Nishihara
- Applicant: Kiyohito Nishihara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-200425 20090831
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor substrate; an element isolation insulator formed in an upper portion of the semiconductor substrate and dividing the upper portion into first and second active areas extending in a first direction; a first contact connected to the first active area; and a second contact connected to the second active area. Each of the first and second active area includes: a first portion connected to one of the first contact and the second contact; and a second portion having an upper surface being placed lower than an upper surface of the first portion. The first contact and the second contact are mutually shifted in the first direction. The first portion of the first active area is disposed adjacent to the second portion of the second active area.
Public/Granted literature
- US20110049604A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-03-03
Information query
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