Invention Grant
- Patent Title: Non-volatile semiconductor memory cell with dual functions
- Patent Title (中): 具有双重功能的非易失性半导体存储单元
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Application No.: US13414734Application Date: 2012-03-08
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Publication No.: US08344445B2Publication Date: 2013-01-01
- Inventor: Hau-Yan Lu , Hsin-Ming Chen , Ching-Sung Yang
- Applicant: Hau-Yan Lu , Hsin-Ming Chen , Ching-Sung Yang
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A non-volatile semiconductor memory cell with dual functions includes a substrate, a first gate, a second gate, a third gate, a charge storage layer, a first diffusion region, a second diffusion region, and a third diffusion region. The second gate and the third gate are used for receiving a first voltage corresponding to a one-time programming function of the dual function and a second voltage corresponding to a multi-time programming function of the dual function. The first diffusion region is used for receiving a third voltage corresponding to the one-time programming function and a fourth voltage corresponding to the multi-time programming function. The second diffusion region is used for receiving a fifth voltage corresponding to the multi-time programming function.
Public/Granted literature
- US20120163072A1 NON-VOLATILE SEMICONDUCTOR MEMORY CELL WITH DUAL FUNCTIONS Public/Granted day:2012-06-28
Information query
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