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US08344450B2 Semiconductor device with buried bit lines and method for fabricating the same 有权
具有掩埋位线的半导体器件及其制造方法

  • Patent Title: Semiconductor device with buried bit lines and method for fabricating the same
  • Patent Title (中): 具有掩埋位线的半导体器件及其制造方法
  • Application No.: US13541213
    Application Date: 2012-07-03
  • Publication No.: US08344450B2
    Publication Date: 2013-01-01
  • Inventor: Su-Young Kim
  • Applicant: Su-Young Kim
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2009-0117433 20091130; KR10-2010-0051196 20100531
  • Main IPC: H01L29/94
  • IPC: H01L29/94
Semiconductor device with buried bit lines and method for fabricating the same
Abstract:
A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other.
Abstract(Chinese):

半导体器件包括：半导体衬底，被配置为在其中包括多个沟槽; 多个掩埋位线，每个被配置为填充每个沟槽的一部分; 多个有源柱，各自形成在每个掩埋位线的上部; 多个垂直门，每个被配置为围绕每个有源支柱; 以及配置成将相邻垂直门彼此耦合的多个字线。

Public/Granted literature
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/86 ..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92 ...有电位跃变势垒或表面势垒的电容器
H01L29/94 ....金属—绝缘体—半导体，例如MOS
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