Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13151952Application Date: 2011-06-02
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Publication No.: US08344459B2Publication Date: 2013-01-01
- Inventor: Tomoaki Uno , Masaki Shiraishi , Nobuyoshi Matsuura , Yukihiro Satou
- Applicant: Tomoaki Uno , Masaki Shiraishi , Nobuyoshi Matsuura , Yukihiro Satou
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2004-008779 20040116
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.
Public/Granted literature
- US20110227169A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-22
Information query
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