Image sensor and method for manufacturing the same

Invention Grant

US08344469B2 Image sensor and method for manufacturing the same 有权

Title translation: 图像传感器及其制造方法

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Patent Title: Image sensor and method for manufacturing the same
Patent Title (中): 图像传感器及其制造方法
Application No.: US13029238

Application Date: 2011-02-17
Publication No.: US08344469B2

Publication Date: 2013-01-01
Inventor: Won-Ho Lee
Applicant: Won-Ho Lee
Applicant Address: US DE Wilmington
Assignee: Intellectual Ventures II LLC
Current Assignee: Intellectual Ventures II LLC
Current Assignee Address: US DE Wilmington
Agency: McAndrews, Held & Malloy, Ltd.
Priority: KR2005-0129439 20051226
Main IPC: H01L31/052
IPC: H01L31/052

Image sensor and method for manufacturing the same

Abstract:

An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.

Abstract(Chinese):

图像传感器包括滤色器，形成在滤色器上的覆盖层和形成在覆盖层上的介质层，其中介质层配置有至少两个介质层，折射率不同于彼此。

Public/Granted literature

US20110198716A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-08-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/052	..与光伏电池直接联合或结合的冷却装置，例如，用于直接与光伏电池结合的主动冷却或散热器的Peltier元件（与光伏模块结合的冷却装置入H02S 40/42）