Invention Grant
- Patent Title: Integrated circuit heating to effect in-situ annealing
- Patent Title (中): 集成电路加热实现原位退火
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Application No.: US12859554Application Date: 2010-08-19
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Publication No.: US08344475B2Publication Date: 2013-01-01
- Inventor: Ian P. Shaeffer , Gary B. Bronner , Brent S. Haukness , Kevin S. Donnelly , Frederick A. Ware , Mark A. Horowitz
- Applicant: Ian P. Shaeffer , Gary B. Bronner , Brent S. Haukness , Kevin S. Donnelly , Frederick A. Ware , Mark A. Horowitz
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device.
Public/Granted literature
- US20110299317A1 INTEGRATED CIRCUIT HEATING TO EFFECT IN-SITU ANNEALING Public/Granted day:2011-12-08
Information query
IPC分类: