Invention Grant
- Patent Title: Fuse structure for high integrated semiconductor device
-
Application No.: US12650321Application Date: 2009-12-30
-
Publication No.: US08344476B2Publication Date: 2013-01-01
- Inventor: Hyung Kyu Kim
- Applicant: Hyung Kyu Kim
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0058760 20090630
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
The present invention provides a technology capable of improving an operation reliability of a semiconductor device. Particularly, a fuse material which constitutes the copper can be prevented from migrating being locked in the recesses or the grooves after a blowing process. A semiconductor device includes an insulating layer including a concave-convex-shaped upper part; and a fuse formed on the insulating layer.
Public/Granted literature
- US20100327402A1 FUSE STRUCTURE FOR HIGH INTEGRATED SEMICONDUCTOR DEVICE Public/Granted day:2010-12-30
Information query
IPC分类: