Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12968747Application Date: 2010-12-15
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Publication No.: US08344484B2Publication Date: 2013-01-01
- Inventor: Toyonori Eto
- Applicant: Toyonori Eto
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2009-291848 20091224
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A semiconductor device may include, but is not limited to: a semiconductor substrate having an element formation region and a dicing region; an element layer over the element formation region and the dicing region; and a multi-layered wiring structure over the dicing region. The multi-layered wiring structure extends upwardly from the element layer. The multi-layered wiring structure has a groove penetrating the multi-layered wiring structure.
Public/Granted literature
- US20110156263A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-06-30
Information query
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