Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12628127Application Date: 2009-11-30
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Publication No.: US08344489B2Publication Date: 2013-01-01
- Inventor: Hiroshi Saitoh , Toshihisa Suzuki , Shingo Sakakibara
- Applicant: Hiroshi Saitoh , Toshihisa Suzuki , Shingo Sakakibara
- Applicant Address: JP Hamamatsu-Shi
- Assignee: Yamaha Corporation
- Current Assignee: Yamaha Corporation
- Current Assignee Address: JP Hamamatsu-Shi
- Agency: Dickstein Shapiro LLP
- Priority: JP2005-351653 20051206; JP2005-351654 20051206; JP2005-376393 20051227; JP2006-296013 20061031
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.
Public/Granted literature
- US20100072564A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-03-25
Information query
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