Invention Grant
- Patent Title: Semiconductor device having a high frequency electrode positioned with a via hole
- Patent Title (中): 具有定位有通孔的高频电极的半导体器件
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Application No.: US12076033Application Date: 2008-03-13
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Publication No.: US08344490B2Publication Date: 2013-01-01
- Inventor: Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yonoda
- Applicant: Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yonoda
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-042872 20050218
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
Public/Granted literature
- US20080174001A1 Semiconductor device Public/Granted day:2008-07-24
Information query
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