Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12739302Application Date: 2008-10-22
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Publication No.: US08344498B2Publication Date: 2013-01-01
- Inventor: Shintaro Yamamichi , Kentaro Mori , Hideya Murai
- Applicant: Shintaro Yamamichi , Kentaro Mori , Hideya Murai
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-273929 20071022
- International Application: PCT/JP2008/069149 WO 20081022
- International Announcement: WO2009/054414 WO 20090430
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection.
Public/Granted literature
- US20100244231A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-30
Information query
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