Invention Grant
- Patent Title: Interface structure for copper-copper peeling integrity
- Patent Title (中): 铜 - 铜剥离完整性的接口结构
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Application No.: US12633499Application Date: 2009-12-08
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Publication No.: US08344506B2Publication Date: 2013-01-01
- Inventor: Cheng-Chung Lin , Chung-Shi Liu , Chen-Hua Yu
- Applicant: Cheng-Chung Lin , Chung-Shi Liu , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/50
- IPC: H01L23/50
Abstract:
An integrated circuit device is disclosed. An exemplary integrated circuit device includes a first copper layer, a second copper layer, and an interface between the first and second copper layers. The interface includes a flat zone interface region and an intergrowth interface region, wherein the flat zone interface region is less than or equal to 50% of the interface.
Public/Granted literature
- US20110133331A1 INTERFACE STRUCTURE FOR COPPER-COPPER PEELING INTEGRITY Public/Granted day:2011-06-09
Information query
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