Invention Grant
US08344511B2 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy
有权
具有由镍合金的硅化物构成的硅化物区域的半导体器件的制造方法
- Patent Title: Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy
- Patent Title (中): 具有由镍合金的硅化物构成的硅化物区域的半导体器件的制造方法
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Application No.: US13414438Application Date: 2012-03-07
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Publication No.: US08344511B2Publication Date: 2013-01-01
- Inventor: Kazuhito Ichinose , Yukari Imai
- Applicant: Kazuhito Ichinose , Yukari Imai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-030179 20090212
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti (titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to forma barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.
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