Invention Grant
- Patent Title: Three-dimensional silicon interposer for low voltage low power systems
- Patent Title (中): 用于低压低功率系统的三维硅插入器
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Application No.: US12544987Application Date: 2009-08-20
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Publication No.: US08344512B2Publication Date: 2013-01-01
- Inventor: John U. Knickerbocker
- Applicant: John U. Knickerbocker
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L23/535
- IPC: H01L23/535

Abstract:
Scalable silicon (Si) interposer configurations that support low voltage, low power operations are provided. In one aspect, a Si interposer is provided which includes a plurality of through-silicon vias (TSVs) within a first plane thereof adapted to serve as power, ground and signal interconnections throughout the first plane such that the TSVs that serve as the power and ground interconnections are greater in number and/or size than the TSVs that serve as the signal interconnections; and a plurality of lines within a second plane of the interposer in contact with one or more of the TSVs in the first plane, the second plane being adjacent to the first plane, adapted to serve as power, ground and signal interconnections throughout the second plane such that the lines that serve as the power and the ground interconnections are greater in number and/or size than the lines that serve as the signal interconnections.
Public/Granted literature
- US20110042795A1 Three-Dimensional Silicon Interposer for Low Voltage Low Power Systems Public/Granted day:2011-02-24
Information query
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