Invention Grant
US08344514B2 Semiconductor device structures and electronic devices including same hybrid conductive vias
有权
半导体器件结构和包括相同混合导电通孔的电子器件
- Patent Title: Semiconductor device structures and electronic devices including same hybrid conductive vias
- Patent Title (中): 半导体器件结构和包括相同混合导电通孔的电子器件
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Application No.: US13085112Application Date: 2011-04-12
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Publication No.: US08344514B2Publication Date: 2013-01-01
- Inventor: Chad A. Cobbley , Jonathon G. Greenwood
- Applicant: Chad A. Cobbley , Jonathon G. Greenwood
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A conductive via of a semiconductor device includes a relatively small diameter portion extending into an active surface of a fabrication substrate and a corresponding, relatively large diameter portion that extends into a back side of the fabrication substrate. This type of conductive via may be fabricated by forming the relatively small diameter portion before or during BEOL processing, while the large diameter portion of each conductive via may be fabricated after BEOL processing is complete. Electronic devices that include one or more semiconductor devices with such conductive vias are also disclosed.
Public/Granted literature
- US20110180936A1 SEMICONDUCTOR DEVICE STRUCTURES AND ELECTRONIC DEVICES INCLUDING SAME HYBRID CONDUCTIVE VIAS Public/Granted day:2011-07-28
Information query
IPC分类:
