Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12782360Application Date: 2010-05-18
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Publication No.: US08344515B2Publication Date: 2013-01-01
- Inventor: Taichi Nishio , Hiroshige Hirano , Yukitoshi Ota
- Applicant: Taichi Nishio , Hiroshige Hirano , Yukitoshi Ota
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-220256 20080828
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a plurality of through vias extending through a substrate. The plurality of through vias are arranged dividedly in three or more via groups. Each of the via groups includes three or more of the through vias that are arranged in two dimensions.
Public/Granted literature
- US20100225005A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-09
Information query
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