Invention Grant
US08344635B2 Driving regulation method for bipolar transistors in electronic ballast and the device thereof 失效
电子镇流器双极晶体管的驱动调节方法及其装置

  • Patent Title: Driving regulation method for bipolar transistors in electronic ballast and the device thereof
  • Patent Title (中): 电子镇流器双极晶体管的驱动调节方法及其装置
  • Application No.: US12531909
    Application Date: 2008-03-06
  • Publication No.: US08344635B2
    Publication Date: 2013-01-01
  • Inventor: Wei Gao
  • Applicant: Wei Gao
  • Applicant Address: DE Munich
  • Assignee: Osram Gesellschaft Mit Beschraenkter Haftung
  • Current Assignee: Osram Gesellschaft Mit Beschraenkter Haftung
  • Current Assignee Address: DE Munich
  • Priority: CN200710089790 20070322
  • International Application: PCT/EP2008/052734 WO 20080306
  • International Announcement: WO2008/113696 WO 20080925
  • Main IPC: H05B41/36
  • IPC: H05B41/36 H05B37/02
Driving regulation method for bipolar transistors in electronic ballast and the device thereof
Abstract:
A method of driving regulation for bipolar transistors in electronic ballast is provided. The method may include: sensing voltage at midpoint of half bridge of the transistors; producing a reference time signal according to a sync signal from a timer; producing actual time interval in this cycle by comparing rising edge of the voltage at midpoint of the half bridge of the transistors with rising edge of a driving signal for the transistors in upper bridge arm in each switching cycle; comparing the actual time interval with the reference time signal to determine pulse width of the driving signal; regulating, in which the driving signal in this switching cycle is prolonged relative to the driving signal in previous switching cycle if the actual time interval is larger than the reference time signal, while the driving signal in this switching cycle is shortened relative to the driving signal in previous switching cycle if the actual time interval is smaller than the reference time signal.
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