Invention Grant
- Patent Title: Reset circuit of high voltage circuit
- Patent Title (中): 高压电路复位电路
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Application No.: US11939431Application Date: 2007-11-13
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Publication No.: US08344766B2Publication Date: 2013-01-01
- Inventor: Sadao Yoshikawa , Toshiki Rai
- Applicant: Sadao Yoshikawa , Toshiki Rai
- Applicant Address: JP Gunma US AZ Phoenix
- Assignee: SANYO Semiconductor Co., Ltd.,Semiconductor Components Industries, LLC
- Current Assignee: SANYO Semiconductor Co., Ltd.,Semiconductor Components Industries, LLC
- Current Assignee Address: JP Gunma US AZ Phoenix
- Agency: Morrison & Foerster LLP
- Priority: JP2006-307460 20061114
- Main IPC: H03L7/00
- IPC: H03L7/00 ; H03K3/02 ; G05F1/10 ; G05F3/02

Abstract:
A reset transistor is prevented from being deteriorated when power-down occurs during a programming operation or an erasing operation. It is made possible to protect the reset transistor as well as other transistors in a circuit to which a high voltage is applied when the power-down occurs during the erasing operation on an EEPROM, because the system is not reset all at once based only on a first reset signal POR of a power-on reset circuit, but is reset based on the first reset signal POR and a low voltage detection signal LD from a low voltage detection circuit so that the reset transistor is not turned on while the high voltage is applied to it.
Public/Granted literature
- US20080111605A1 RESET CIRCUIT OF HIGH VOLTAGE CIRCUIT Public/Granted day:2008-05-15
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