Invention Grant
- Patent Title: Memory interface circuit and drive capability adjustment method for memory device
- Patent Title (中): 存储器接口电路和驱动能力调整方法
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Application No.: US13474154Application Date: 2012-05-17
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Publication No.: US08344776B2Publication Date: 2013-01-01
- Inventor: Takahide Baba
- Applicant: Takahide Baba
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-265702 20091120
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/18 ; H03L7/00

Abstract:
Provided is a memory interface circuit connected to a memory device that outputs a first data signal, and including: a first delay unit delaying a first strobe signal outputted from the memory device by a first delay amount to generate a first delayed strobe signal; a first data latch unit latching the first data signal as a first latched data signal in synchronization with the first delayed strobe signal; a first range calculating unit calculating a first delay range width that is a width of a range of values of the first delay amount which allow the first data latch unit to correctly latch the first data signal as the first latched data signal; and a drive capability setting unit adjusting the drive capability of the memory device so as to widen the first delay range width.
Public/Granted literature
- US20120229186A1 MEMORY INTERFACE CIRCUIT AND DRIVE CAPABILITY ADJUSTMENT METHOD FOR MEMORY DEVICE Public/Granted day:2012-09-13
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