Invention Grant
US08344776B2 Memory interface circuit and drive capability adjustment method for memory device 有权
存储器接口电路和驱动能力调整方法

Memory interface circuit and drive capability adjustment method for memory device
Abstract:
Provided is a memory interface circuit connected to a memory device that outputs a first data signal, and including: a first delay unit delaying a first strobe signal outputted from the memory device by a first delay amount to generate a first delayed strobe signal; a first data latch unit latching the first data signal as a first latched data signal in synchronization with the first delayed strobe signal; a first range calculating unit calculating a first delay range width that is a width of a range of values of the first delay amount which allow the first data latch unit to correctly latch the first data signal as the first latched data signal; and a drive capability setting unit adjusting the drive capability of the memory device so as to widen the first delay range width.
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