Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13177805Application Date: 2011-07-07
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Publication No.: US08344786B2Publication Date: 2013-01-01
- Inventor: Masahiro Gion
- Applicant: Masahiro Gion
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-271388 20091130
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A semiconductor integrated circuit includes a level shift circuit which is located so that a second IO cell region is interposed between the level shift circuit and a first IO cell region, and converts a signal output from an IO cell of the first IO cell region into a signal having an amplitude of a second voltage and outputs the resultant signal, and an internal circuit which is operated using the signal having the amplitude of the second voltage output from the level shift circuit. A signal interconnect via which the signal output from the IO cell of the first IO cell region is input to the level shift circuit is provided between the IO cell of the first IO cell region and the level shift circuit, extending over or in an IO cell of the second IO cell region.
Public/Granted literature
- US20110285448A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-11-24
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