Invention Grant
- Patent Title: Semiconductor device
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Application No.: US13010024Application Date: 2011-01-20
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Publication No.: US08344788B2Publication Date: 2013-01-01
- Inventor: Shunpei Yamazaki , Jun Koyama
- Applicant: Shunpei Yamazaki , Jun Koyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-012627 20100122
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
Public/Granted literature
- US20110181349A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-07-28
Information query
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