Invention Grant
- Patent Title: CMOS amplifier with integrated tunable band-pass function
- Patent Title (中): 具有集成可调带通功能的CMOS放大器
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Application No.: US12997357Application Date: 2009-06-11
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Publication No.: US08344810B2Publication Date: 2013-01-01
- Inventor: Yong Lian , Libin Yao , Xiaoyuan Xu , Xiaodan Zou
- Applicant: Yong Lian , Libin Yao , Xiaoyuan Xu , Xiaodan Zou
- Applicant Address: SG Singapore
- Assignee: National University of Singapore
- Current Assignee: National University of Singapore
- Current Assignee Address: SG Singapore
- Agency: Merchant & Gould P.C.
- International Application: PCT/SG2009/000209 WO 20090611
- International Announcement: WO2009/151406 WO 20091217
- Main IPC: H03F3/191
- IPC: H03F3/191
Abstract:
A CMOS amplifier with integrated tunable band-pass function, a tunable active resistor structure, a method of amplifying an input signal and a method of fabricating an amplifier. The tunable active resistor structure comprises two symmetrically cross-coupled transistors.
Public/Granted literature
- US20110140785A1 CMOS AMPLIFIER WITH INTEGRATED TUNABLE BAND-PASS FUNCTION Public/Granted day:2011-06-16
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