Invention Grant
US08344815B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
表面声波谐振器,表面声波振荡器和表面声波模块单元

  • Patent Title: Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
  • Patent Title (中): 表面声波谐振器,表面声波振荡器和表面声波模块单元
  • Application No.: US13125239
    Application Date: 2009-10-22
  • Publication No.: US08344815B2
    Publication Date: 2013-01-01
  • Inventor: Kunihito Yamanaka
  • Applicant: Kunihito Yamanaka
  • Applicant Address: JP Tokyo
  • Assignee: Seiko Epson Corporation
  • Current Assignee: Seiko Epson Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff & Berridge, PLC
  • Priority: JP2008-273973 20081024
  • International Application: PCT/JP2009/005541 WO 20091022
  • International Announcement: WO2010/047114 WO 20100429
  • Main IPC: H01L41/04
  • IPC: H01L41/04 H03H9/64 H03B5/30
Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
Abstract:
In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, the line occupying ratio causing the maximum electromechanical coupling coefficient and the line occupying ratio causing the maximum reflection of the surface acoustic waves in the IDT are different from each other, the center of the IDT has the line occupying ratio causing an increase in electromechanical coupling coefficient in comparison with the edges of the IDT, and the edges of the IDT have the line occupying ratio causing an increase in reflection of the surface acoustic waves in comparison with the center of the IDT.
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