Invention Grant
US08344845B2 Multilayered structure 有权
多层结构

  • Patent Title: Multilayered structure
  • Patent Title (中): 多层结构
  • Application No.: US13140938
    Application Date: 2009-12-18
  • Publication No.: US08344845B2
    Publication Date: 2013-01-01
  • Inventor: Henry H. Radamson
  • Applicant: Henry H. Radamson
  • Agency: Young & Thompson
  • Priority: SE0850160 20081219
  • International Application: PCT/SE2009/051458 WO 20091218
  • International Announcement: WO2010/071591 WO 20100624
  • Main IPC: H01C7/10
  • IPC: H01C7/10
Multilayered structure
Abstract:
A thermistor structure includes a multilayer structure of at least one quantum layer surrounded by barrier layers in a multilayer structure. The quantum layer includes Ge and may be in the form of either a quantum well or quantum dots. The barrier layer is a carbon-doped Si layer, and the thermistor is intended to provide a way to compensate for the strain in a multilayer IR-detector structure through carbon doping of the quantum layer and barrier layers.
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