Invention Grant
- Patent Title: Multilayered structure
- Patent Title (中): 多层结构
-
Application No.: US13140938Application Date: 2009-12-18
-
Publication No.: US08344845B2Publication Date: 2013-01-01
- Inventor: Henry H. Radamson
- Applicant: Henry H. Radamson
- Agency: Young & Thompson
- Priority: SE0850160 20081219
- International Application: PCT/SE2009/051458 WO 20091218
- International Announcement: WO2010/071591 WO 20100624
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A thermistor structure includes a multilayer structure of at least one quantum layer surrounded by barrier layers in a multilayer structure. The quantum layer includes Ge and may be in the form of either a quantum well or quantum dots. The barrier layer is a carbon-doped Si layer, and the thermistor is intended to provide a way to compensate for the strain in a multilayer IR-detector structure through carbon doping of the quantum layer and barrier layers.
Public/Granted literature
- US20110254653A1 MULTILAYERED STRUCTURE Public/Granted day:2011-10-20
Information query