Invention Grant
- Patent Title: RF anechoic chamber
- Patent Title (中): 射频消声室
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Application No.: US12779147Application Date: 2010-05-13
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Publication No.: US08344932B2Publication Date: 2013-01-01
- Inventor: Rong-Chung Liu
- Applicant: Rong-Chung Liu
- Applicant Address: TW Taoyuan County
- Assignee: Emtrek Technologies Corporation
- Current Assignee: Emtrek Technologies Corporation
- Current Assignee Address: TW Taoyuan County
- Agency: Guice Patents PLLC
- Main IPC: H01Q17/00
- IPC: H01Q17/00

Abstract:
A rectangular RF anechoic chamber, where the material or absorbing material attached to its feeding wall has a homogeneous property on X-Y plane, i.e. the plane parallel to the feeding wall. The MA(s) are mounted on the feeding wall from which the material with a homogeneous property will reduce interferences from the fields which produce scattered fields from the wall; and may produce a quiet zone with significantly improved quality, and specially at low frequency band. Quiet zone quality means the field uniformity in the test zone.
Public/Granted literature
- US20110279301A1 RF ANECHOIC CHAMBER Public/Granted day:2011-11-17
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