Invention Grant
US08345231B2 Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
有权
确定衬底中的缺陷的方法和用于在光刻工艺中曝光衬底的装置
- Patent Title: Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
- Patent Title (中): 确定衬底中的缺陷的方法和用于在光刻工艺中曝光衬底的装置
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Application No.: US12470848Application Date: 2009-05-22
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Publication No.: US08345231B2Publication Date: 2013-01-01
- Inventor: Nilay Saha , Hermen Folken Pen
- Applicant: Nilay Saha , Hermen Folken Pen
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G01N21/00
- IPC: G01N21/00
Abstract:
Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan range; determining the variations of the measured fraction across the scan range; determining from the variations whether any defects are present in the substrate.
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