Invention Grant
US08345265B2 Lithographic apparatus and methods for compensating substrate unflatness, determining the effect of patterning device unflatness, and determining the effect of thermal loads on a patterning device 有权
用于补偿衬底不平坦度的光刻设备和方法,确定图案形成装置不平坦度的影响,以及确定热负荷对图案形成装置的影响

  • Patent Title: Lithographic apparatus and methods for compensating substrate unflatness, determining the effect of patterning device unflatness, and determining the effect of thermal loads on a patterning device
  • Patent Title (中): 用于补偿衬底不平坦度的光刻设备和方法,确定图案形成装置不平坦度的影响,以及确定热负荷对图案形成装置的影响
  • Application No.: US12616185
    Application Date: 2009-11-11
  • Publication No.: US08345265B2
    Publication Date: 2013-01-01
  • Inventor: Dirk-Jan Bijvoet
  • Applicant: Dirk-Jan Bijvoet
  • Applicant Address: NL Veldhoven
  • Assignee: ASML Netherlands B.V.
  • Current Assignee: ASML Netherlands B.V.
  • Current Assignee Address: NL Veldhoven
  • Agency: Pillsbury Winthrop Shaw Pittman LLP
  • Main IPC: G01B11/24
  • IPC: G01B11/24
Lithographic apparatus and methods for compensating substrate unflatness, determining the effect of patterning device unflatness, and determining the effect of thermal loads on a patterning device
Abstract:
A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a sensor configured to measure a height level, curvature and/or angle of a surface of a patterning device supported on the support.
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